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专利概况
专利名称 USING SCATTEROMETRY TO OBTAIN MEASUREMENTS OF IN CIRCUIT STRUCTURES
申请号 KR1020057006902 申请日
公开(公告)号 KR1020050063786A 公开(公告)日
申请(专利权)人 ADVANCED MICRO DEVICES INC 发明人 CHOO BRYAN K; SINGH BHANWAR; SUBRAMANIAN RAMKUMAR; RANGARAJAN BHARATH
专利来源 国家知识产权局 转化方式
摘要

A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. Measurements are taken in accordance with scatterometry based techniques of repeating in circuit structures that evolve on a wafer as the wafer undergoes the fabrication process. The measurements can be employed to generate feed forward and/or feedback control data that can utilized to selectively adjust one or more fabrication components and/or operating parameters associated therewith to adapt the fabrication process. Additionally, the measurements can be employed in determining whether to discard the wafer or portions thereof based on a cost benefit analysis, for example. Directly measuring in circuit structures mitigates sacrificing valuable chip real estate as test grating structures may not need to be formed within the wafer, and also facilitates control over the elements that actually affect resulting chip performance.? KIPO & WIPO 2007

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