专利名称 | WAFER BONDED MOS DECOUPLING CAPACITOR | ||
申请号 | KR1020077015691 | 申请日 | |
公开(公告)号 | KR1020070086997A | 公开(公告)日 | |
申请(专利权)人 | TEXAS INSTRUMENTS INCORPORATED | 发明人 | ROUSE RICHARD P |
专利来源 | 国家知识产权局 | 转化方式 | |
摘要 |
A technique for forming a MOS capacitor (100) that can be utilized as a decoupling capacitor is disclosed. The MOS capacitor is formed separately from the particular circuit device (170) that it is to service. As such, the capacitor and its fabrication process can be optimized in terms of efficiency, etc. The capacitor is fabricated with conductive contacts that allow it to be fused to the device (170) via conductive pads of the device (170). As such, the capacitor (100) and device (170) can be packaged together and valuable semiconductor real estate can be conserved as the capacitor is not formed out of the same substrate as the device (170). The capacitor further includes deep contacts (150, 152) whereon bond pads (180, 182) can be formed that allow electrical connection of the capacitor and device (170) to the outside world.? KIPO & WIPO 2007 |
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