专利名称 | USING SCATTEROMETRY TO OBTAIN MEASUREMENTS OF IN CIRCUIT STRUCTURES | ||
申请号 | KR1020057006902 | 申请日 | |
公开(公告)号 | KR101028867B1 | 公开(公告)日 | |
申请(专利权)人 | GLOBALFOUNDRIES INC | 发明人 | 추 브라이언 케이; 신그 브한와; 수브라마니안 람큐마; 란그라잔 브하가스 |
专利来源 | 国家知识产权局 | 转化方式 | |
摘要 |
A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. Measurements are taken in accordance with scatterometry based techniques of repeating in circuit structures that evolve on a wafer as the wafer undergoes the fabrication process. The measurements can be employed to generate feed forward and/or feedback control data that can utilized to selectively adjust one or more fabrication components and/or operating parameters associated therewith to adapt the fabrication process. Additionally, the measurements can be employed in determining whether to discard the wafer or portions thereof based on a cost benefit analysis, for example. Directly measuring in circuit structures mitigates sacrificing valuable chip real estate as test grating structures may not need to be formed within the wafer, and also facilitates control over the elements that actually affect resulting chip performance. |
主管部门:海南中小企业服务 | 建设单位:海南商业联合会
版权所有:海南商业联合会 | 备案号:粤ICP备13083911号(ICP加挂服务)@2017