| 专利名称 | BI-DIRECTIONAL ESD DIODE STRUCTURE WITH ULTRA-LOW CAPACITANCE THAT CONSUMES A SMALL AMOUNT OF SILICON REAL ESTATE | ||
| 申请号 | US13931936 | 申请日 | |
| 公开（公告）号 | US20150001672A1 | 公开（公告）日 | |
| 申请（专利权）人 | Texas Instruments Incorporated | 发明人 | Toshiyuki Tani; Akihiko Yamashita; Motoaki Kusamaki; Kentaro Takahashi |
| 专利来源 | 国家知识产权局 | 转化方式 | |
| 摘要 |
A bi-directional electrostatic discharge diode structure consumes substantially less silicon real estate and provides ultra-low capacitance by utilizing a p? epitaxial layer that touches and lies between an n+ lower epitaxial layer and an n+ upper epitaxial layer. A metal contact touches and lies over a p+ layer, which touches and lies over the n+ upper epitaxial layer. |
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